Researchers from Singapore University of Technology and Design (SUTD) have made a breakthrough in integrating ultrathin 2D transistors and interconnects.
Using density functional theory (DFT) simulations, they found that sandwiching a single layer of bismuth between two layers of MoS2 creates a perfectly flat structure.
Once the bismuth sheet becomes completely flat, the electronic states overlap, and the material suddenly conducts electricity like a metal.
This discovery may help address the challenge of integrating 2D transistors and interconnects without sacrificing contact performance.
Author's summary: Breakthrough in 2D layer-tronics integrates ultrathin transistors.